| 摘要 |
A method for making a semiconductor device including a silicon substrate includes implanting oxide into the substrate after gate stack formation and before source/drain dopant implantation. The oxide is implanted such that it defines a concentration profile peak at about 500 ANGSTROM from the surface of the substrate. Then, Nitrogen is implanted and annealed as appropriate to cause the Nitrogen to agglomerate along the peak of the oxide concentration. The Nitrogen agglomeration establishes the boundary of shallow junction regions and minimal overlap regions in the substrate. Next, the source/drain dopant is implanted and activated, with the dopant essentially being constrained by the Nitrogen to remain concentrated in the shallow junction and minimal overlap regions, thereby minimizing junction capacitance and overlap capacitance in the finished device and consequently improving the speed of operation of the device.
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