发明名称 |
METHOD AND APPARATUS FOR PRODUCING CRYSTALLINE SILICON |
摘要 |
PROBLEM TO BE SOLVED: To produce crystalline silicon having large crystal grain sizes. SOLUTION: In a method for producing crystalline silicon in which silicon molten liquid 10 in an ingot mold 1 is cooled from the bottom part 1a of the ingot mold 1 and gradually solidified toward the upper direction, the silicon molten liquid 10 at the bottom part is first solidified by cooling the bottom part 1a of the ingot mold 1 in the state that a positive temp. gradient is imparted in the horizontal direction. Then the molten liquid is gradually solidified toward the upper direction.
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申请公布号 |
JP2000327487(A) |
申请公布日期 |
2000.11.28 |
申请号 |
JP19990144127 |
申请日期 |
1999.05.24 |
申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
SASAKI JUNICHI;WAKITA SABURO |
分类号 |
H01L31/04;C30B29/06;(IPC1-7):C30B29/06 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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