发明名称 METHOD AND APPARATUS FOR PRODUCING CRYSTALLINE SILICON
摘要 PROBLEM TO BE SOLVED: To produce crystalline silicon having large crystal grain sizes. SOLUTION: In a method for producing crystalline silicon in which silicon molten liquid 10 in an ingot mold 1 is cooled from the bottom part 1a of the ingot mold 1 and gradually solidified toward the upper direction, the silicon molten liquid 10 at the bottom part is first solidified by cooling the bottom part 1a of the ingot mold 1 in the state that a positive temp. gradient is imparted in the horizontal direction. Then the molten liquid is gradually solidified toward the upper direction.
申请公布号 JP2000327487(A) 申请公布日期 2000.11.28
申请号 JP19990144127 申请日期 1999.05.24
申请人 MITSUBISHI MATERIALS CORP 发明人 SASAKI JUNICHI;WAKITA SABURO
分类号 H01L31/04;C30B29/06;(IPC1-7):C30B29/06 主分类号 H01L31/04
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