发明名称 |
METHOD FOR FORMING AND APPLYING ANTI-REFLECTIVE COATING USING HYDROCARBON GAS |
摘要 |
PURPOSE: A method for forming and applying an anti-reflective coating(ARC) using a hydrocarbon gas is provided to improve an etching selectivity and to reduce a cost, by using only a hydrocarbon gas while excluding a helium gas used as a carrier gas in a plasma enhanced chemical vapor deposition(PECVD) chamber, and by forming the ARC while controlling a temperature at upper and lower parts of a substrate in the chamber. CONSTITUTION: A high reflection layer is formed on a semiconductor substrate(100). An anti-reflective coating(ARC)(106) is formed on the high reflection layer(104) by using a hydrocarbon gas only. A photoresist pattern(108) is formed on the ARC.
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申请公布号 |
KR20000067643(A) |
申请公布日期 |
2000.11.25 |
申请号 |
KR19990015637 |
申请日期 |
1999.04.30 |
申请人 |
SAMSUNG ELECTRONICS CO, LTD. |
发明人 |
KIM, YONG BEOM;KIM, CHANG HWAN |
分类号 |
G03F7/004;G02B1/11;G03F7/09;G03F7/11;G03F7/40;H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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