| 摘要 |
PROBLEM TO BE SOLVED: To enhance positioning accuracy for trimming by a method wherein a fuse element for laser trimming, a pattern for laser trimming positioning, a complete depletion high-speed MOS transistor, a high breakdown-strength MOS transistor, an ESD protective element and a bleeder resistor, are installed. SOLUTION: A fuse element 31 for laser trimming, a pattern 610 for laser trimming positioning, a complete depletion high-speed MOS transistor 210, a high breakdown-strength MOS transistor, an ESD protective element 310 and a bleeder resistance 410, are installed in a semiconductor integrated circuit. The pattern 610 for laser trimming positioning is composed of a high light reflectance region and a low light reflectance region. The high light reflectance region is formed of a high light reflectance film which is formed on a flat substrate. The low light reflectance region is formed of a high light reflectance film which is constituted of the same thin film as the fuse element 31, and which is formed on a pattern such as a lattice or the like for light diffused reflection. |
