发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To facilitate miniaturization of a semiconductor element by employing a structure in which heat is dissipated from the top surface of the semiconductor element. SOLUTION: In a semiconductor device, a semiconductor element 13 is equipped on a circuit pattern 12 of a substrate 11 for a power module laminated and bonded on a heat sink 16, a frame member 17 is bonded on the surface of the heat sink 16 so as to surround the element, and then terminals 18 are connected to the electrode parts of the element. An auxiliary board 21 for dissipating heat is equipped on the element. The auxiliary board 21 consists of an AlN plate 21b in which an Al plate 21a which is opposite to the element and is connected to the electrode parts of the element is laminated and bonded. The terminals are provided on the inner circumferential surface and are connected to the Al plate directly or wire or a planar pieces 22 to be connected to the electrode parts of the element. A heat dissipation fin 23, or a heat conduction bar or a second water-cooling heat sink 25 may be equipped on the auxiliary board 21. Moreover, a molybdic plate 41b, on which a first and second connecting plates 41a and 41c are laminated and bonded on both surfaces thereof so as to be electrically connected to it, may be substituted for the auxiliary substrate 21.
申请公布号 JP2000323630(A) 申请公布日期 2000.11.24
申请号 JP20000053284 申请日期 2000.02.29
申请人 MITSUBISHI MATERIALS CORP 发明人 NAGASE TOSHIYUKI;NAGATOMO YOSHIYUKI;SHIMAMURA SHOICHI
分类号 H01L23/34;H01L21/52;H01L21/60;H01L25/07;H01L25/18;(IPC1-7):H01L23/34 主分类号 H01L23/34
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