| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, which has a semiconductor layer in SOI structure improving element characteristics while preventing a drop in threshold voltage, a kink phenomenon, etc., and its manufacture. SOLUTION: This semiconductor device has a gate electrode 30 formed on a channel formation region of the semiconductor layer 10a in the SOI structure, source and drain regions (11 and 12) formed in the semiconductor layer at both side of the gate electrode, and a back-gate electrode 31 formed across a back-gate insulating film 26 buried in an insulating film below the channel formation region and the insulating film 23 is thicker below the channel formation region than below the source and drain regions and the semiconductor layer 10a is thinner in the channel formation region than in the source and drain regions.
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