TWO TRANSISTOR SINGLE CAPACITOR FERROELECTRIC MEMORY

摘要

PROBLEM TO BE SOLVED: To obtain a back-plane ferroelectric memory apparatus employing a read transistor, a write transistor and a ferroelectric capacitor storage means. SOLUTION: A back plane 26 forms a gate region underneath the read transistor 20 with the potential of the back plane affected by polarization of the ferroelectric capacitor. The write transistor 18 and the read transistor 20 are different, the write transistor 18 may be a vertical structure and the read transistor 20 may be a back plane planer structure. The drain of the write transistor 18 is connected to the back plane of the read transistor 20 and a plate of the ferroelectric capacitor 22.