发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To suppress the shift of a pattern sandwiched between insulation films by connecting a wiring on a layer insulation film through holes below it to electrically isolated pattern regions. SOLUTION: After forming bit lines 7a-7d and a second layer insulation film 8 on a first layer insulation film 5, the layer insulation film 8 is heated to reflow at about 750-900 deg.C for 20 min, the first insulation film 5 beneath the second layer insulation film 8 is also heated at the same time to reflow again but is susceptible to stress and the first and fourth bit lines 7a-7d which are originally not connecting parts contact to a lower wiring 4b and trench isolations 6 below it through holes 5a, 5d below them, thereby blocking the shift of the second layer insulation film 8 due to reflow again. Thus the wire breaking due to shift of the bit lines 7a, 7d, the contact to adjacent bit lines 7b, 7c and the poor connection with wirings formed thereon do not occur.
申请公布号 JP2000323570(A) 申请公布日期 2000.11.24
申请号 JP19990130614 申请日期 1999.05.11
申请人 FUJITSU LTD 发明人 MINAMI TAKANOBU;TSUBOI OSAMU;IKEDA TOSHIMI;MATSUMIYA MASATO;KAWABATA KUNINORI
分类号 H01L21/768;G03F7/20;G03F9/00;H01L21/027;H01L21/3205;H01L21/8242;H01L23/52;H01L23/522;H01L23/544;H01L27/108 主分类号 H01L21/768
代理机构 代理人
主权项
地址