GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a new structure where a light-emitting output from a main light-emitting surface is improved, related to a semiconductor light-emitting element which uses a substrate of a gallium nitride compound semiconductor. SOLUTION: An active layer 3 and a p-type clad layer 5 comprising at least In are laminated in this order on a substrate 1 of an n-type GaN. Here, an intermediate layer 2 which is made semi-insulating by doping with p-type impurity is inserted between the substrate 1 and the active layer 3, so that a current is evenly injected over the entire active layer 3, for constant light- emission from the active layer 3.