FORMATION OF VANADIUM OXIDE THIN FILM AND BOLOMETER TYPE INFRARED SENSOR EMPLOYING VANADIUM OXIDE THIN FILM

摘要

PROBLEM TO BE SOLVED: To make uniform the electric characteristics of a vanadium oxide thin film by heat treating a thin film of vanadium oxide having a specified resistivity at a specified temperature under reducing atmosphere. SOLUTION: A thin film of vanadium oxide (VOx: 2.25<=x<2.5) is formed on a semiconductor substrate having diameter of 2-7 inch and heat treated at 250-350 deg.C under reducing atmosphere. The thin film of vanadium oxide is formed by low pressure sputtering in reaction gas using metal vanadium as a target. The low pressure is set in the range of 1-4 mTorr. The resistivity is 1-10Ωand standard deviation thereof is 5-30%. Standard deviation of the temperature coefficient of resistance of the thin film is 1-8%.