| 摘要 |
PROBLEM TO BE SOLVED: To provide a III group nitride semiconductor having no or extremely small migration. SOLUTION: A buffer layer 2 composed of an alumnum nitride AIN is formed dispersedly, and in an island-like state such as dot-like, strip-like, or lattice-like, on a sapphire substrate 1. A III group nitride semiconductor 3 is epitaxially grown in a vertical direction to the dispersed buffer layer 2, and is epitaxially grown in a lateral direction in an upper part of the substrate 1 in which the buffer layer 2 does not exist. Thus, it is possible to obtain the III group nitride semiconductor 3 having no or extremely small migration 4. Furthermore, a part 32 which is epitaxially grown in a lateral direction of this III group nitride semiconductor 3 has excellent crystallinity, and if a III group nitride semiconductor element is formed in this upper part, an element characteristic can be enhanced. |
