发明名称 MANUFACTURE OF SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor wafer, where a processing load can be lessened in a chamfering process, and all the surfaces of all wafers are conformed to a prescribed crystal plane when ingot materials are collectively sliced into wafers. SOLUTION: In a cylinder grinding process, a silicon ingot block 10 is ground into a cylinder with a grinding wheel 11 around an axis (a) which extends in the same direction with a required crystal orientation, when a single crystal silicon ingot is grown in crystal. As a result, if the ground ingot cylinder is sliced at a right angle with the axis (a), all silicon wafers become all true circles each possessed of a front and a rear surface in parallel with a required crystal plane (100). Therefore, a silicon wafer is not required to be previously rounded in a chamfering process, so that a processing load can be lessened in a chamfering process. When ingot materials are collectively sliced, the surfaces of all wafers are conformed to a prescribed crystal plane.
申请公布号 JP2000323443(A) 申请公布日期 2000.11.24
申请号 JP19990134668 申请日期 1999.05.14
申请人 MITSUBISHI MATERIALS SILICON CORP 发明人 HARADA SEISHI
分类号 H01L21/304;H01L21/66;(IPC1-7):H01L21/304 主分类号 H01L21/304
代理机构 代理人
主权项
地址