| 摘要 |
PROBLEM TO BE SOLVED: To provide an infrared-ray image sensor with a simplified configuration by which a dark current can be corrected with high accuracy. SOLUTION: In this infrared-ray image sensor in which a plurality of picture elements are arranged in line or in a planar form so as to detect the intensity of infrared ray by using the transition of electron between sub-bands within a multiplex quantum well layer, a first pixel 1 in which an optical coupling structure 6 is formed to convert a vertically entering infrared ray in an orthogonal direction, and a second pixel 2 in which the optical coupling structure 6 is not formed, are arranged mixed, so that a difference between currents in the first and second picture elements can be detected.
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