| 摘要 |
PROBLEM TO BE SOLVED: To prevent cracking of a composite perovskite dielectrics thin film by allowing a dielectrics thin film to comprise a composite perovskite oxide while the linear expansion coefficient of a substrate is specified. SOLUTION: A germanium(Ge) wafer, high-density aluminum oxide(Al2O3) substrate, strontium titanate(SrTiO3) single crystal, and magnesium oxide(MgO) single crystal are used for a substrate 11. A Ti film 12 and Pt film 13 are formed on the substrate 11 by a DC magnetron sputter method. A scandium tantalum lead [Pb(Sc0.5Ta0.5)O3] oxide film is formed on it as a dielectrics film 15 by a sol-gel method. On the dielectrics thin film 15, a Pt film is formed as an upper part electrode 16 by the DC magnetron sputter method, providing a thin-film capacitor. Here, the linear expansion coefficient of the substrate 11 is 7-13×10-6 / deg.k.
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