| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device and its manufacturing method in which a mass-storage memory and a highly integrated logic circuit can be combined in the semiconductor device having the semiconductor memory and the logic circuit. SOLUTION: The semiconductor device 1 is constituted by providing a semiconductor memory 5 and a logic cixrcuit 4, forming capacitor devices C above bit lines BL, forming a first metal layer 28 formed of a buried metal layer and connected to diffusion layers 13A or lower wiring layers 14 in a substrate 11, forming a first metal wiring layer 29 connected to the first metal layer 28 and approximately in parallel to the major surface of the substrate 11, forming a second metal layer 31 formed of a buried metal layer and connected to the first metal wiring layer 29, and forming a second metal wiring layer 32 on an insulating layer 30 in an upper layer than the capacitor devices C and connected to the second metal layer 31. |
