发明名称 PLASMA TREATMENT DEVICE AND METHOD
摘要 PROBLEM TO BE SOLVED: To facilitate control of the plasma distribution by electrically connecting an inductively coupled antenna arranged on the surface surrounding a plasma formation region in series with a capacitively coupled antenna arranged in a portion of the surface outside the inductively coupled antenna. SOLUTION: A coiled inductively coupled antenna 1 is arranged outside a discharge part 2a of an insulating material constituting a vacuum vessel 2 along with a processing part 2b having an electrode 5 for arranging a wafer 13 or the like installed thereon. A circuit of a load 17 in parallel to a disc capacitively coupled antenna 8 which is connected in series with a first high frequency power supply 10 via an impedance matching box 3 and provided in an atmosphere side on a ceiling of the discharge part 2a is grounded. The impedance of the load 17 is changed and the ratio of the high frequency currents of both antennas is changed so that the density of the generated plasma is changed. The adhesion of reaction products generated in a large amount in the ceiling region 15b of the discharge part 2a caused by plasma by the inductively coupled antenna 1 is suppressed by the electric field of the capacitively coupled antenna 8.
申请公布号 JP2000323298(A) 申请公布日期 2000.11.24
申请号 JP20000060448 申请日期 2000.03.01
申请人 HITACHI LTD 发明人 DOI AKIRA;YOSHIOKA TAKESHI;EDAMURA MANABU;KAZUMI HIDEYUKI;KANAI SABURO;TETSUKA TSUTOMU;ARAI MASATSUGU;MAEDA KENJI;TSUBONE TSUNEHIKO
分类号 H01L21/302;H01L21/3065;H01L21/31;H05H1/46 主分类号 H01L21/302
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