| 摘要 |
PROBLEM TO BE SOLVED: To realize a manufacturing method a contact which can block the occurrence of residue at a swelling phenomenon section caused by an interval between gate electrodes different in phases between a cell array region and a peripheral circuit region. SOLUTION: A gate electrode 105 is made on a substrate 101 and is covered with a spacer 107 and a thermal oxide film 109, and then a first interlayer insulating film 114 is made and flattened, and this is patterned and etched and it is filled with a embedding landing pad 117 of polysilicon thereby being flattened. Hereon, a bit line 123 is made, and a third interlayer insulating film 125 is stacked, and etching is made to the landing pad 117, and is filled with a storage electrode 127, and hereon a conductive film 131 and a plate electrode 133 are made. |
