| 摘要 |
PROBLEM TO BE SOLVED: To manufacture with a superior yield by a method wherein a connection part which electrically connects a conductive layer to a wiring layer is formed so as to reach the conductive layer in a predetermined region in an insulation film, and formed in an opening part formed by reducing a size of a section in a vertical direction from an insulation film side to a substrate side. SOLUTION: An n-type active layer 102 is formed in an upper part of a semi-insulation gallium arsenic substrate 101, and also a gate electrode 107 of a Schottky junction is formed on a center of the substrate 101. At both ends of the n-type active layer 102 and the gate electrode 107 of a Schottky junction, an ohmic contact 105 is formed as two connection parts composed of metal materials in an opening part in which a size is reduced towards the substrate 101 of an insulation film 104, and an n+ impurity diffusion region 103 as a conductive layer of diffused n-type impurities of high concentration is formed in the substrate 101 just under the ohmic contact 105. The diffused region 103 is electrically connected to a metal wiring layer 106 via the ohmic contact 105.
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