发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT AND ITS MANUFACTURE |
摘要 |
PROBLEM TO BE SOLVED: To obtain a technique for realizing increase in speed of operation and improve yield of a semiconductor integrated circuit. SOLUTION: In the semiconductor integrated circuit, the operation speed is increased by forming work lines WL or bit lines BL of low-resistance tungsten films 10c and 18c, and the yield of a relieving fuse FL is improved by forming the relieving fuse FL of a titanium nitride film 29 in the same layer as a plate electrode, placing a dummy wiring pattern DM underneath a connecting hole 33 extending to the relieving fuse FL for preventing the connecting hole 33 extending to the relieving fuse FL from passing through the relieving fuse FL and reaching the semiconductor substrate 1. |
申请公布号 |
JP2000323676(A) |
申请公布日期 |
2000.11.24 |
申请号 |
JP19990130602 |
申请日期 |
1999.05.11 |
申请人 |
HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD |
发明人 |
KAWAMURA ISATO;HASEGAWA MASATOSHI;MIYATAKE SHINICHI;NAKAMURA MASAYUKI;KAJITANI KAZUHIKO |
分类号 |
H01L27/04;H01L21/82;H01L21/822;H01L21/8242;H01L27/108 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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