发明名称 |
ELECTRON EMISSION ELEMENT |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide an electron emission element having a good electron emission characteristic. SOLUTION: This electron emission element has an electron supply layer 1 constituted of an n-GaN layer, an electron transfer layer 2 for transferring electrons to the surface side and constituted of non-doped (intrinsic) Alx Ga1-x N(0<=x<=1) having an gradient composition as to Al containing ratio x, a surface layer 3 constituted of non-doped AlN having a negative affinity(NEA). A band gap of the electron transfer layer 2 constituted of Alx Ga1-x N almost continuously increases from the electron supply layer 1 to the surface layer 3, and the electron affinity approaches negative or zero. When applying a voltage V so that the surface electrode 4 becomes positive, the band of Alx Ga1-xN is bent. Thereby current mainly caused by a diffuse current flows from the electron supply layer 1 to surface layer 3 via the electron transfer layer 2.</p> |
申请公布号 |
JP2000323015(A) |
申请公布日期 |
2000.11.24 |
申请号 |
JP19990337064 |
申请日期 |
1999.11.29 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
UENOYAMA TAKESHI;TODA TAKAO;DEGUCHI MASAHIRO;KITAHATA MAKOTO;SETSUNE KENTARO |
分类号 |
H01J19/24;H01J1/30;H01J1/308;H01J21/04;(IPC1-7):H01J1/308 |
主分类号 |
H01J19/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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