| 摘要 |
PROBLEM TO BE SOLVED: To reduce the correction error in proximity effect with no additional special circuit or memory required, by correcting an area density by a high-order approximation of fore scattering/backscattering energy related to changes in pattern density within the range of backscattering bore so that an exposure amount is decided. SOLUTION: In an input part 1, a shot wherein a pattern data is resolved into such pattern as actual electron beam can draw at a pre-stage. In other words, a data for each pattern graphic which the actual electron beam can draw at a single exposure is present, and process is executed for each shot. An area value comprised in a mesh is calculated by an area density map generating means 2, and is smoothed by a smoothing means 4, which is housed in an area density map memory 3 again. For calculation at higher precision with the area density map thus acquired, the area density before smoothing and a corrected area density after smoothing correction for the same address on the area density map memory 3 are read. After this calculation, a correcting process is executed by a correction amount calculating means 8 from the correction area density map memory 3 representing the same address.
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