| 摘要 |
PROBLEM TO BE SOLVED: To suppress the power supply noise in a memory with a logic function provided with capacitor for noise control or the like especially at the time of high-frequency operation and to further stabilize its operation. SOLUTION: A semiconductor integrated circuit device such as memory with logic function is provided with a plurality of DRAM micro cells and a logic part, and with a capacitor for noise control formed of multiple unit capacitor in the same construction with the information storage capacitor of a memory cell which are coupled in parallel. After information storage nodes SN of each unit capacitor for noise control are coupled in common to a diffusion layer DN1 through a contact SNCT and a plug PLUG1, they are further coupled respectively to bit line wiring layers BL which are formed of metal material such as tungsten and formed in the same manufacturing process as bit liens of a memory array through a plug PLUG2, and the bit line wiring layers BL are coupled in common to each other at one end. |
