发明名称 ASHING APPARATUS
摘要 PROBLEM TO BE SOLVED: To eliminate influence of a gas flow to make the ashing process uniform without rotating a stage, by feeding a process gas in a closed process chamber, holding the pressure constant in this chamber, and exhausting after a fixed time. SOLUTION: In a process chamber a heater stage 4 for heating a wafer 3 and a UV lamp 6 for providing rays at a wavelength of nearly 254 nm are installed, and when a process gas is fed to the process chamber through a three-way valve 8, a valve 9 is closed. When the pressure shown by a manometer 10 reaches a desired value, the three-way valve 8 is switched for exhaustion, the valve 9 remains closed to thereby holding a fixed pressure in the process chamber. After a predetermined time lapsed, the valve 9 opens to exhaust the process chamber, the valve 9 is closed again when a set pressure value is reached in the process chamber, and the three-way valve 8 is switched for gas feeding to the process chamber, thereby processing at a fixed pressure. The above process sequence is repeated to do the ashing process.
申请公布号 JP2000323455(A) 申请公布日期 2000.11.24
申请号 JP19990126735 申请日期 1999.05.07
申请人 HITACHI LTD 发明人 KAWASAKI HIROMICHI;FUJITO TOSHIAKI
分类号 H01L21/302;G03F7/42;H01L21/027;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/302
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