| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma doping apparatus which can cope with a large- diameter wafer and introduce impurities at low energy and a shallow depth. SOLUTION: This embodiment comprises a high frequency power source 14 for supplying a high frequency power, and an antenna 12 for radiating the high frequency power, and further comprises a plasma generation chamber 11 for generating a helicon plasma of a gas containing a conductive impurity by the high frequency power radiated from the antenna 12; and a substrate holding tool 100, and has an impurity introduction chamber 19 which brings the helicon plasma of a gas containing the conductive impurity into contact with a semiconductor substrate 100 to introduce the conductive impurity into the semiconductor substrate 100; and a plasma flow route/shaping chamber 16 which is provided between the plasma generation chamber 11 and the impurity introduction chamber 19, and functions as a flow route for introducing the helicon plasma from the plasma generation chamber 11 to the impurity introduction chamber 19, and comprises magnetic field generating means 17 for generating a magnetic field for restricting expansion of the helicon plasma flowing in the flow route.
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