| 摘要 |
PROBLEM TO BE SOLVED: To protect a semiconductor switching element from overvoltage. SOLUTION: This snubber device is provided with a MOS gate semiconductor switching element IGBT 10 having a collector, an emitter and a gate, wherein the collector is connected with a high-voltage side main electrode A of a semiconductor switching element IGBT 1 and the emitter is connected with a low voltage side main electrode K of the semiconductor switching element IGBT 1, and a voltage-restraining circuit 11y, which is installed between the high voltage side main electrode A of the semiconductor switching element IGBT 1 and the gate of the MOS gate semiconductor switching element IGBT 10 and restrains an applied voltage of the semiconductor switching element IGBT 1 to be lower than a prescribed value.
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