| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor which has its performance and reliability improved, and its manufacture. SOLUTION: To form a coplanar thin film transistor having an active layer of polycrystalline silicon, a polysilicon film 3 is formed on an undercoat film 2 having a recessed part 12 formed in a desirable shape by patterning. The top surface of the polysilicon film 3 is polished by a chemical mechanical polishing method(CMP) to remove projections of polysilicon grain boundary parts, thereby forming a flat surface in level with the top surface of the undercoat film. Then a gate insulating film 4, a gate electrode 5, an inter-layer insulating film 6, and source and drain electrodes 7 and 8 are formed on the polished polysilicon film and undercoat film.
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