发明名称 SEMICONDUCTOR LASER AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To show enough effect for transverse light confinement by forming a slab-type active layer and a clad layer, forming a cap layer which is optically coupled to an active layer through a clad layer, forming a groove by removing a part of a cap layer, and forming an electrode inside a groove. SOLUTION: A groove 18 is provided for confining generated light transversely by generating a transverse step in effective refractive index by changing film thickness of a p-type GaN cap layer 10 in a bottom part thereof. The laser is constructed to make waveguide light easily leak to the cap layer 10 on a clad layer 9 by making the clad layer 9, etc., in an upper part of the active layer 6 thin and is set so that light is hard to leak out to the cap layer 10 by adjusting film thickness of the cap layer 10 in a groove bottom by forming a recess, that is, the groove 18 in a part wherein an electrode 13 of the cap layer 10 is formed. Thereby, effective refractive index to light which performs waveguide for a bottom part of a part with the groove 18 is made high thus forming a refractive index step in a transverse direction.
申请公布号 JP2000323792(A) 申请公布日期 2000.11.24
申请号 JP19990129575 申请日期 1999.05.11
申请人 PIONEER ELECTRONIC CORP 发明人 NISHIZUKA MITSURU;OTA HIROYUKI
分类号 H01S5/00;H01S5/042;H01S5/20;H01S5/323;H01S5/343;(IPC1-7):H01S5/20 主分类号 H01S5/00
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