| 摘要 |
PROBLEM TO BE SOLVED: To avoid the contact failure by forming a second insulation frequency side wall on a first insulation film side wall surface located higher than a conductor layer, forming a layer insulation film between gate electrodes with no conductor layer formed, and providing a wiring in holes formed into the layer insulation film deeply down to the conductor layer and on the layer insulation film. SOLUTION: A conductor (polysilicon) layer 12 is formed through a first side wall 10 between gate electrodes at regions for forming contact holes 16, and the top end thereof is located at a position lower than the top end of a second insulation film 7, i.e., located at a position higher than the top end of the gate electrodes. Thus the conductor layer 12 protects the first and second side walls 10, 14 for insulating the conductor layer 12 from the gate electrodes when contact holes 14 are formed, thereby avoiding excessively etching the insulation frequency side walls. This prevents short circuit between a wiring 17 buried in the contact holes and the gate electrode.
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