| 摘要 |
A method of processing a substrate, such as a semiconductor wafer, in a vacuum processing chamber includes depositing a material on a surface of the substrate using a gas mixture, and purging the chamber of residual gases by flowing SiH4, in combination with nitrogen or a noble gas, into the chamber. WSix, is deposited on a semiconductor wafer using a mixture comprising WF6 and dichlorosiliane, and the chamber is subsequently purged of residual WF6 and dichlorosilane by flowing SiH4, in combination with nitrogen or a noble gas, into the chamber. A further method of processing a substrate in a vacuum processing chamber includes the step of conditioning the chamber by flowing SiH4, in combination with nitrogen, or with nitrogen and a noble gas, into the chamber prior to depositing a material on the surface of the substrate. Semiconductor wafers processed according to the inventive method are characterized by more uniform sheet resistance values and reduced film stress.
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