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发明名称
Mustererzeugungsverfahren und Verfahren und Apparat zur Herstellung einer Halbleitervorrichtung unter Verwendung von diesem Verfahren
摘要
申请公布号
DE69519143(D1)
申请公布日期
2000.11.23
申请号
DE19956019143
申请日期
1995.08.25
申请人
SONY CORP., TOKIO/TOKYO
发明人
OGAWA, TOHRU
分类号
G03F7/20;(IPC1-7):G03F7/20
主分类号
G03F7/20
代理机构
代理人
主权项
地址
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