| 发明名称 |
MEMORY CIRCUIT |
| 摘要 |
The present invention relates to a memory having sense amplifiers and data latches, the data latches being used in a test mode to form a signature register. In a normal operation mode, the data latches are form write data latches.
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| 申请公布号 |
WO0070623(A1) |
申请公布日期 |
2000.11.23 |
| 申请号 |
WO2000GB01806 |
申请日期 |
2000.05.12 |
| 申请人 |
STMICROELECTRONICS LIMITED;BARNES, WILLIAM, BRYAN |
发明人 |
BARNES, WILLIAM, BRYAN |
| 分类号 |
G11C29/32;G11C29/40;(IPC1-7):G11C29/00 |
主分类号 |
G11C29/32 |
| 代理机构 |
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