METHOD AND DEVICE FOR EXTRACTION OF ELECTRODES IN A VACUUM AND EMISSION CATHODES FOR SAID DEVICE

摘要

The inventive method for extracting electrons in a vacuum consists in the following: creation of a cathode which comprises at least one junction (9) between a metal (7) which is used as an electron reservoir and an n-type semiconductor (8), possessing a surface potential barrier which has a height which is measured in tenths of electron volts and having a thickness ranging from 1-20 nm; the electrons are injected via the metal-semiconductor junction (9) in order to create a charge which has enough space to reduce the semiconductor surface potential barrier to a value which is lower than or equal to 1 eV in relation to the Fermi level of the metal (7); the height of the n-type semiconductor surface potential barrier (Vp) is controlled with the aid of the polarization source creating an electric field in a vacuum in order to regulate emission of the electron flow to the anode.