METHOD FOR DEPOSITING A TWO-LAYER DIFFUSION BARRIER

摘要

The invention relates to a method for depositing a two-layer diffusion barrier on a semi-conductor wafer, consisting of a TaN and a Ta layer as a support layer for copper conductors. According to the invention, the deposition of the TaN layer takes place in a first stage at temperatures of over 200 DEG C and the deposition of the Ta layer takes place in a second stage during the cooling of the semi-conductor wafer, at a temperature of below 50 DEG C.