发明名称 |
IMPROVED RF POWER TRANSISTOR |
摘要 |
A method for manufacturing a silicon bipolar power high frequency transistor device is disclosed. A transistor device according to the present method is also disclosed. The transistor device assures conditions for maintaining a proper BVCER to avoid collector emitter breakdown during operation. According to the method an integrated resistor (20) is arranged along at least one side of a silicon bipolar transistor (1) on a semiconductor die which constitutes a substrate for the silicon bipolar transistor. The integrated resistor is connected between the base and emitter terminals of the silicon bipolar transistor (1). The added integrated resistor (20) is a diffused p<+> resistor on said semiconductor die or a polysilicon or NiCr resistor placed on top of the isolation layers. In an interdigitated transistor structure provided with integrated emitter ballast resistors the added resistor or resistors (20) will be manufactured in a step simultaneously as producing the ballast resistors. |
申请公布号 |
WO0070681(A1) |
申请公布日期 |
2000.11.23 |
申请号 |
WO2000SE00943 |
申请日期 |
2000.05.12 |
申请人 |
TELEFONAKTIEBOLAGET LM ERICSSON |
发明人 |
JOHANSSON, TED |
分类号 |
H01L21/331;H01L23/64;H01L29/732;(IPC1-7):H01L23/62 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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