| 摘要 |
In accordance with the invention, a method for opening holes in semiconductor fabrication includes the steps of providing a pad stack (104) on a substrate (102), forming a hard mask layer (106) on the pad stack, the hard mask layer selectively removable relative to the pad stack, patterning a resist layer (108) on the hard mask layer, the resist layer being selectively removable relative to the hard mask layer and having a thickness sufficient to prevent scalloping, etching the hard mask layer selective to the resist layer down to the pad stack, and removing the resist layer. After removing the resist layer, the pad stack is etched selective to the hard mask layer such that a hole is opened down to the substrate.
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