发明名称 Method for fabricating a semiconductor optical device
摘要 A mesa structure including an active layer is formed by selective growth on a semiconductor substrate and a layer containing aluminum is grown on the topmost part of the mesa structure. This aluminum-containing layer is then oxidized and used as a mask to form current blocking layers. <IMAGE>
申请公布号 EP1024565(A3) 申请公布日期 2000.11.22
申请号 EP20000101538 申请日期 2000.01.26
申请人 NEC CORPORATION 发明人 SUZUKI, NAOFUMI
分类号 H01S5/00;B82Y20/00;H01L21/20;H01S5/227;H01S5/343 主分类号 H01S5/00
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