| 摘要 |
Semiconductor device (10) has device section (11) and alignment mark section (12). The device section (11) has element regions and element isolation regions, and alignment mark section (12) has mark formation regions (12a) and mark isolation regions (12b). The ratio of the area of the mark formation region (12a) to the sum of the area of mark formation (12a) and mark isolation regions (12b) is smaller than the ratio of the area of the element region to the sum of the area of the element region and element isolation region. The isolation regions are preferably trench isolation regions. The mark formation region (12a) may be in a rectangular frame shape. The height difference between the surface of the mark formation region (12a) and the surface of the mark isolation region (12b) enables detection by an alignment mark detector. Also disclosed is a semiconductor device with device section (11) and alignment mark section (12), where both sections have two regions formed in identical processes, and the ratio of the areas of the two regions in each section is different. |
