| 摘要 |
electrical engineering, computer engineering. SUBSTANCE: device produces negative high-voltage value, which may be used for programming of electrically cleared programmed flash memory. Channel generation pools of respective transistors are designed for connection to terminal of respective transistor. Negative high voltage leads to no polarization of substrate-pool diode in direction of conduction, so than no short circuit is generated with respect to substrate. Device has four steps, each of which has two MOS transistors with n-channel structure. Output of fourth stage has MOS transistor Z with n-channel structure. EFFECT: decreased effect of through-substrate control. 3 cl, 2 dwg
|
