METHOD FOR PRODUCING AN OHMIC CONTACT

摘要

The invention relates to a method for producing a component with a substrate (1) consisting of SiC and comprising at least one ohmic contact (2) and at least one Schottky contact (4). According to this method, the component is heated to a temperature of over 1300 DEG C, at least for the growth of the epitaxial layer (3). In order to prevent the production of the ohmic contact from causing a deterioration of other structures on the component and to ensure that the ohmic contact is rendered insensitive vis-à-vis future process steps at high temperatures, first metal is applied to the substrate (1) for the ohmic contact (2) before the epitaxial layer (3) is grown.