AN EPITAXIAL SILICON WAFER WITH INTRINSIC GETTERING AND A METHOD FOR THE PREPARATION THEREOF

摘要

This invention is directed to a novel process for the preparation of a silicon wafer comprising a surface having an epitaxial layer deposited thereon. In one embodiment, the process comprising heating a surface of a wafer starting material to remove a silicon oxide layer from the surface. Within about 30 seconds after removing the silicon oxide layer from the surface, the surface is exposed to an atmosphere comprising silicon to deposit a silicon epitaxial layer onto the surface to form an epitaxial wafer. The epitaxial wafer is then heated to a soak temperature of at least about 1175 DEG C while exposing the epitaxial layer to an oxidizing atmosphere comprising an oxidant. Afterwards, the heated epitaxial wafer is cooled at a rate of at least about 10 DEG C/sec.