| 摘要 |
PURPOSE: An electrostatic discharge protecting device is provided to improve electrostatic discharge characteristics by connecting a highly doped impurity region, formed below a highly doped impurity region coupled with a pad, to a barrier insulation film of an SOI substrate. CONSTITUTION: An electrostatic discharge protecting device comprises a plurality of isolation films(33) which are formed at an SOI substrate consisting of stacked silicon substrate(30), a buried insulation film(31) and p-well(32). At one side of the n-well(32), first n+ impurity regions(34a) are formed at both sides of the isolation film(33), which is located at a region in which a NPN bipolar transistor is to be formed. A p+ impurity region(35) is formed at the other side of the p-well(32). A second n+ impurity region(34b) is formed under the first impurity region(34a) to be connected to a pad, and is connected with the buried insulation film(31).
|
