DRAM DEVICE HAVING OUTPUT FEEDBACK CIRCUIT OF SENSE AMP

摘要

PURPOSE: A DRAM device having an output feedback circuit of a sense amp is provided which improves the voltage gain of a sense amp. CONSTITUTION: A DRAM has an output feedback circuit of a sense amp(16) which can obtain the output data value accurately during the read operation of a memory device and the operation of the sense amp is stabilized by that the voltage swing of db and /db line is increased. The DRAN device improves the voltage gain of a sense amp by increasing the voltage difference of data bus pair by feeding back the output of the sense amp. The DRAM device comprises a sensing voltage feedback circuit(20) which is driven in response to a sense amp enable signal and is fed back with the output of the sense amp and detects the voltage level, and then applies a stable potential equivalent to the output of the sense amp to an input data bus line of the sense amp.