METHOD FOR MANUFACTURING INGOT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing an ingot of a semiconductor device is provided to manufacture an ingot containing low density oxygen, by determining whether measurement values of an ingot grown at a changed crucible rotation speed corresponds to desired measurement values, and by suitably controlling the rotation speed according to the determination result. CONSTITUTION: Characteristic values of an ingot grown at an initial rotation speed of the crucible are measured. A temperature gradient of the ingot and a ratio of the crucible rotation speed to the temperature gradient are calculated. A crucible rotation speed is changed according to the temperature gradient of the ingot and the ratio of the crucible rotation speed to the temperature gradient. Characteristic values of the ingot grown at a changed crucible rotation speed are measured. Whether Characteristic values of the ingot grown at a changed crucible rotation speed and desired values correspond, is determined. When the characteristic values and the desired values correspond, the crucible rotation speed is established as the changed speed.