METHOD FOR MEASURING WAFER USING FOCUSED ION BEAM EQUIPMENT

摘要

PURPOSE: A method for measuring a wafer using a focused ion beam(FIB) equipment is provided to predict data to be measured by a scanning electron microscope(SEM) by using the data measured by the FIB equipment, and to shorten a measuring time by directly checking the data in a manufacturing line. CONSTITUTION: A wafer is prepared. The angle, a theta prime, of a material layer evaporated on the wafer and the depth, an A'B'bar, of a contact are measured. A theta, the angle of the material layer when vertically looking at the wafer is obtained from the equation that the theta = arctangent(tangent theta prime multiplied by square root of two). The depth of the contact when vertically looking at the wafer is obtained from the equation that A'B' bar = AB bar multiplied by COSINE theta two prime (Theta two prime is an angle when looking at the wafer from a focused ion beam equipment after etching the wafer, and an AB bar is a depth of a contact measured by the focused ion beam equipment).