| 摘要 |
PURPOSE: A method for fabricating a thin film transistor is provided to be capable of enhancing the mobility of charges and the tight adhesion property with a gate insulating layer by vertically etching a capping and obliquely etching an active layer. CONSTITUTION: First, a buffer layer(12) and an amorphous silicon layer(13) are sequentially formed on a substrate(11). Then, a capping layer is formed on the amorphous silicon layer. Next, photoresist patterns are formed on the capping layer and an active layer(13a) is formed by vertically etching the capping layer and obliquely etching the amorphous silicon using the photoresist pattern as masks. Then, the photoresist pattern is removed and the active layer formed with the amorphous silicon is recrystallized into polysilicon. Next, the capping layer is removed and a gate insulating layer(15) and a gate electrode(16) are formed on the buffer layer and the active layer. Finally, a channel area, a drain area and a source area(13b) are formed by injecting impurity ions of high density.
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