METHOD OF FORMING A POLYCIDE GATE ELECTRODE OF A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of making a polycide gate electrode is provided of prevent an anti-reflected layer from being lifted from a silicide film by improving coupling force between the silicide film and the anti-reflected layer. CONSTITUTION: A method of making a polycide gate electrode comprises forming a gate insulation film(2) on a silicon substrate(1) on which a field oxide film(100) is formed. A polysilicon film(3) is formed on the gate insulation film(2) by a diffusion process. A silicide film(4) is formed on the polysilicon film(3) by a chemical vapor deposition process. An anti-reflected layer(5) is formed on the silicide film(4) by performing a diffusion process to the substrate in diffusion equipment.