发明名称 METHOD FOR CONTROLLING FOREIGN SUBSTANCE OF APPARATUS FOR EVAPORATING NITRIDE LAYER
摘要 PURPOSE: A method for controlling a foreign substance of an apparatus for evaporating a nitride layer is provided to control the foreign substance generated in an evaporation furnace, by increasing the temperature of the evaporation furnace higher than a processing temperature in every process except the process for evaporating the nitride layer. CONSTITUTION: A wafer in a carrier is loaded on a boat, and the boat is transferred into an evaporation furnace maintaining a processing temperature of 760°C to evaporate a nitride layer on the wafer. The boat is transferred to the exterior of the evaporation furnace while having the evaporation furnace maintain the processing temperature. The wafer mounted on the boat is transferred to the carrier, and the temperature of the evaporation furnace is increased to 800°C to eliminate a foreign substance in the evaporation furnace.
申请公布号 KR20000066360(A) 申请公布日期 2000.11.15
申请号 KR19990013390 申请日期 1999.04.15
申请人 HYUNDAI MICRO ELECTRONICS CO.,LTD. 发明人 KIM, JA YEONG
分类号 H01L21/318;(IPC1-7):H01L21/318 主分类号 H01L21/318
代理机构 代理人
主权项
地址