| 摘要 |
PURPOSE: A method for manufacturing a half tone phase inversion mask is provided to form a clean pattern by etching a light blocking layer and a phase shift layer using an insulating layer as a mask. CONSTITUTION: A phase shift layer(22), a light blocking layer(23), an insulating layer(24) and a photoresist material layer are sequentially stacked on a quartz substrate(21). After the photoresist material layer is patterned, the insulating layer is etched using the patterned photoresist material layer as a mask. After the photoresist material is eliminated, the light blocking layer and phase shift layer are sequentially etched using the insulating layer as a mask. The insulating layer is eliminated.
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