| 摘要 |
PURPOSE: A method for manufacturing an isolation structure of a semiconductor device is provided to evaporate an oxidation layer without a void in a trench, by plasma-processing the trench to charge the trench with plus ions, and by increasing an evaporation speed of the oxidation layer on the bottom of the trench. CONSTITUTION: After an insulating layer(3) is formed on a substrate(1), a trench structure is formed on the substrate by a photolithography process. An oxidation layer(4) is evaporated on the entire surface of the trench and insulating layer. The oxidation layer is planarized to form an isolation structure positioned in the trench. After the trench structure is formed, in particular, the trench is charged with minus ions by a plasma process.
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