SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device is provided to improve a high speed characteristic at a low voltage by forming an N-epitaxial layer to the height of the surface of an insulating layer existing in a lower part of a conductive layer for a floating base, and to improve a step coverage of a metal interconnection without an additional process by forming a plug in a contact hole. CONSTITUTION: A semiconductor device comprises a semiconductor substrate(31), an insulating layer and a semiconductor layer. The insulating layer is formed within the semiconductor substrate in a first region and consecutively on the semiconductor substrate. The semiconductor layer is formed on the semiconductor substrate in a second region to the height of the surface of the insulating layer.